Magnetic memory device and method for production thereof
AssigneeSony Corporation
InventorMakoto Motoyoshi
Life of this patent
Estimating the term…
Abstract
A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.
Claims18
A magnetic memory device comprising:
- memory elements based on tunnel magnetoresistance effect elements, each consisting of a magnetization pinned layer in which the direction of magnetization is pinned, a tunnel barrier layer, and a magnetic layer in which the direction of magnetization is variable, which are laid one over another;
- a first conducting layer formed on one side of the memory element with an insulating layer interposed therebetween;
- and
- a second conducting layer formed on the other side of the memory element,
- wherein information is written into the memory element by applying current to a first conducting layer and also to a second conducting layer, and written information is read out of the memory element through a reading wiring of the memory element which is attached to the connecting hole formed in the insulating layer, the reading wiring being connected to a lower wiring existing below the first conducting layer without passage through the conducting layer in the same level as the first conducting layer.
A method for producing a magnetic memory device having memory elements based on tunnel magnetoresistance effect, each consisting of a magnetization pinned layer in which the direction of magnetization is pinned, a tunnel barrier layer, and a magnetic layer in which the direction of magnetization is variable, which are laid one over another, such that information is written into the memory element as current is applied to a first conducting layer formed on one side of the memory element with an insulating layer interposed therebetween and also to a second conducting layer formed on the other side of the memory element and written information is read out of the memory element through a reading wiring of the memory element which is attached to the connecting hole formed in the insulating layer, the method comprising:
- a step of embedding a lower wiring to be connected to the reading wiring in the first insulating layer formed below the first conducting layer;
- a step of forming the connecting hole through the second insulating layer in which the first conducting layer has been embedded;
- and
- a step of connecting the reading wiring to the lower wiring through the connecting hole.
Dependencies are inferred from the claim text.