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US 7,095,119 B2Granted
Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorShunji Takase
Life of this patent
Estimating the term…
Abstract
A semiconductor device is equipped with fuses each made of a conductive material vertically extended through an insulator layer employed in the semiconductor device. Holes are formed which vertically penetrate the insulator layer. Sidewalls are formed on their corresponding wall surfaces of the holes. The holes formed with the sidewalls are buried with a conductive material.
Claims20
A semiconductor device comprising:
- a substrate;
- a first insulator layer formed on the substrate;
- a first conductive layer formed on the first insulator layer;
- a second insulator layer formed on the first conductive layer, the second insulator layer including a through hole having a substantially vertical side face;
- a second conductive layer formed on the second insulator layer;
- a dielectric sidewall structure formed on the side face of the through hole so that the dielectric sidewall structure gradually narrows the through hole;
- and
- a fuse formed of a conductive material that buries the narrowed through hole, said fuse having a lower end connected to the first conductive layer and an upper end connected to the second conductive layer.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first dielectric film formed on the semiconductor substrate;
- a first conductive film formed on the first dielectric film;
- a second dielectric film formed on the first conductive film, the second dielectric film including a through hole that exposes the first conductive film;
- a dielectric sidewall structure formed on a side surface of the through hole so that the dielectric sidewall structure gradually narrows the through hole;
- a conductive material filled in the narrowed through hole;
- and
- a second conductive film on the second dielectric film and the conductive material, so that the conductive material electrically connects the first and second conductive films to each other.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first conductive film formed on the semiconductor substrate;
- a dielectric film formed on the first conductive film and the semiconductor substrate, the dielectric film having a through hole that exposes the first conductive film;
- a dielectric sidewall structure formed in the through hole so that the through hole is gradually narrowed by the dielectric sidewall structure to expose the first conductive film;
- a fuse structure formed by a conductive material filled in the narrowed through hole;
- and
- a second conductive film on the dielectric film and the fuse structure, so that the fuse structure electrically connects the first and second conductive films to each other.
4 more elements
Dependencies are inferred from the claim text.