Magnetoresistive random access memory, and manufacturing method thereof
OwnerSeon Yong Chainventor
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Abstract
The present invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof. The whole cells are connected to each other by using a substrate as a ground terminal and a vertical structure field effect transistor (FET) for connecting the cells to the bit line. Thus, the MRAM is easily manufactured without requiring a special process for isolation of each cell. The MRAM uses the vertical structure FET to simplify the whole manufacturing process. An MTJ cell mask process which is essential in a general horizontal structure FET is omitted, to improve a speed of the MRAM and attain high integration of the MRAM.
Claims3
A magnetoresistive random access memory comprising:
- a vertical structure field effect transistor including;
- channel column and drain area sequentially formed on an insulation substrate;
- source area formed on the insulation substrate on which the channel column has not been formed, and read word lines formed at both sides of around the channel column to serve as a gate;
- and
- a contact line, a magnetic tunnel junction cell, a bit line and a write word line sequentially formed on the drain area,
- wherein the magnetic tunnel junction cell is aligned in a matrix shape through the self-alignment method by using a bit line mask and a word line mask, without requiring a special mask process for forming the patterns of the magnetoresistive random access memory,
- wherein the magnetic tunnel junction cell is formed by sequentially stacking an anti-ferroelectric thin film, a pinned ferromagnetic thin film, an insulation layer and a free ferromagnetic thin film on the contact line.
Dependencies are inferred from the claim text.