Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same

A semiconductor memory device comprising:

• a semiconductor substrate;
• a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers;
• a first contact connected to the first diffusion layer;
• a first conductive oxygen barrier film having a lower surface, a side surface, and an upper surface defining the first conductive oxygen barrier film, the lower surface being electrically connected and larger than an upper surface of the first contact;
• a first connecting member formed directly above the first conductive oxygen barrier film and connected to the first conductive oxygen barrier film;
• a first ferroelectric capacitor formed on the first connecting member and including a first lower electrode, a first upper electrode and a first ferroelectric film interposed between the first lower electrode and the first upper electrode, the first connecting member being in contact with the first lower electrode and not being in direct contact with the first ferroelectric film;
• a second transistor formed on the semiconductor substrate and including a second gate electrode, the second diffusion layer and a third diffusion layer;
• a second contact connected to the third diffusion layer;
• a second conductive oxygen barrier film electrically connected to the second contact, covering at least an upper surface of the second contact, and having an area larger than an area of the upper surface of the second contact;
• a second connecting member formed on the second conductive oxygen barrier film and connected to the second conductive oxygen barrier film;
• and
• a second ferroelectric capacitor formed on the second connecting member and including a second lower electrode, a second upper electrode and a second ferroelectric film interposed between the second lower electrode and the second upper electrode, the second connecting member being in contact with the second lower electrode and not being in direct contact with the second ferroelectric film, the first and second upper electrodes being connected to the second diffusion layer.