Method of plasma etching of high-K dielectric materials
AssigneeApplied Materials, Inc.
InventorsGuangxiang Jin, Padmapani Nallan, Ajay Kumar
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Abstract
A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.
Claims42
A method of plasma etching a layer of dielectric material, comprising:
- etching a layer of dielectric material comprising at least one of HfO2, ZrO2, Al2O3, BST, PZT, ZrSiO2, HfSiO2, and TaO2 using a plasma formed from CO, a chlorine containing gas and O2, wherein the etching step further comprises the step of supplying 20 to 300 sccm of Cl2 and 2 to 200 sccm of CO.
A method for plasma etching a workpiece having a layer of HfO2 comprising:
- supplying between 20 to 300 sccm of Cl2, between 2 to 200 sccm of CO, and between 1 to 100 sccm of at least one of Ar and O2;
- maintaining a gas pressure of between 2–100 mTorr;
- applying a bias power to a cathode pedestal of between 0 to 100 W;
- applying power to an inductively coupled antenna of between 200 to 2500 W to produce a plasma from the supplied gases;
- maintaining said workpiece having the layer of HfO2 at a temperature between 100 and 500 degrees Celsius;
- and
- etching the layer of HfO2 using the plasma.
A computer-readable medium containing software that when executed by a computer causes an etch reactor to etch a layer of dielectric material using a method comprising:
- etching a layer of dielectric material comprising at least one of HfO2, ZrO2, Al2O3, BST, PZT, ZrSiO2, HfSiO2, and TaO2 using a plasma formed from CO, a chlorine containing gas and O2, wherein the etching step further comprises the step of supplying 20 to 300 sccm of Cl2 and 2 to 200 sccm of CO.
A computer-readable medium containing software that when executed by a computer causes a etch reactor to plasma etch a workpiece having a layer of HfO2 using a method comprising:
- supplying between 20 to 300 sccm of Cl2, between 2 to 200 sccm of CO, and between 1 to 100 sccm of at least one of Ar and O2;
- maintaining a gas pressure of between 2–100 mTorr;
- applying a bias power to a cathode pedestal of between 0 to 100 W;
- applying power to an inductively coupled antenna of between 200 to 2500 W to produce a plasma from the supplied gases;
- maintaining said workpiece having the layer of HfO2 at a temperature between 100 and 500 degrees Celsius;
- and
- etching the layer of HfO2 using the plasma.
A method of plasma etching a layer of dielectric material, comprising:
- etching a layer of dielectric material containing hafnium using a plasma comprising CO, a chlorine containing gas and O2, wherein said etching step further comprises the step of supplying 20 to 300 sccm of Cl2 and 2 to 200 sccm of CO.
A method of plasma etching a layer of dielectric material, comprising:
- etching a layer of dielectric material containing hafnium using a plasma comprising CO, a chlorine containing gas and at least one of Ar and O2, wherein the etching further comprises the step of supplying 20 to 300 sccm of Cl2 and 2 to 200 sccm of CO.
Dependencies are inferred from the claim text.