Method of manufacturing semiconductor device and semiconductor device

A method for manufacturing a semiconductor device, the device comprising MOSFET structure having an F-containing NiSi layer formed on diffusion regions and on gate electrodes, a depth from the bottom of the F-containing NiSi layer to the junction position of the diffusion regions being confined within the range of 20 to 100 nm, the method comprising:

• forming the gate electrodes above a semiconductor substrate with a gate insulation film being interposed between the semiconductor substrate and the gate electrodes;
• forming the diffusion regions by introducing an impurity into the semiconductor substrate with the gate insulating film and the gate electrodes being employed as a mask;
• forming a F-containing layer on a surface layer of a silicide-forming region by ion-implanting F atoms at a dosage of 8.0×1013 cm−2 or more in the silicide-forming region of silicon for forming the silicide;
• depositing a Ni film on the F-containing layer without heat-treating the F-containing layer;
• heat-treating the Ni film to turn the silicon of the silicide-forming region into NiSi, thereby forming the F-containing NiSi layer on diffusion regions and on gate electrodes;
• and
• subjecting the F-containing NiSi layer to a heat treatment for a period of time equal to or shorter than, an allowable duration defined as a function of junction depth and temperature by the following formula (A):
• ta=Dj2/Exp(34.7−2.35×104/Ta)+68 (A)
• (wherein ta is the allowable duration (minutes);
• Dj is a depth (nm) of the position of junction as measured from the bottom of the NiSi layer;
• and Ta is a heat treatment temperature (K:
• Kelvin)).