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AssigneeNanya Technology Corporation
InventorsMeng-Hung Chen, Shian-Jyh Lin, Chia-Sheng Yu
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A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method includes the steps of forming a first insulating layer that includes a nitride along a profile of a gate structure and a junction region, forming a temporary layer that has a doped oxide on the first insulting layer, removing a portion of the temporary layer by performing a selective etch of the oxide with a mask while leaving a plug portion of the temporary layer over the junction region, forming a second insulting layer that has an undoped oxide in a region where the portion of the temporary layer is removed, removing the plug portion by performing a selective etch of the undoped oxide to form a contact hole, removing a portion of the first insulating layer at a bottom of the contact hole, and forming a conductive contact ins the contact hole.
A method for forming a self-aligned contact in a semiconductor device, comprising the steps of:
A method for forming a self-aligned contact in a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.