Gate electrode for FinFET device

A method of forming a FinFET, the method comprising:

• forming a source region on a substrate;
• forming a drain region on the substrate;
• forming one or more fins interconnecting the source region and the drain region;
• forming a self-planarizing conductive layer over the substrate and the one or more fins, the self-planarizing conductive layer having a substantially flatter topography than an underlying topography, wherein the forming the self-plan conductive layer is performed by depositing a metal organic film and heating the metal organic film, thereby evaporating organic materials of the metal organic film and forming a conductive layer;
• forming a mask layer over the self-planarizing conductive layer;
• patterning the mask layer to define a gate electrode;
• and
• removing excess portions of the self-planarizing conductive layer such that remaining portions of the self-planarizing conductive layer form the gate electrode.

A method of forming a FinFET, the method comprising:

• forming a source region on a substrate;
• forming a drain region on the substrate;
• forming one or more fins interconnecting the source region and the drain region;
• forming self-planarizing conductive layer over the substrate and the one or more fins, the self-planarizing conductive layer having a substantially flatter topography than an underling topography, wherein the forming the self-planarizing conductive layer is performed by depositing a conductive layer over the substrate and subjecting the conductive material to pressure sufficient to substantially planarize the conductive layer;
• forming a mask layer over the self-planarizing conductive layer;
• patterning the mask layer to define a gate electrode;
• and
• removing excess portions of the self-planarizing conductive layer such that remaining portions of the self-planarizing conductive layer form the gate electrode.

A transistor formed on a substrate, the transistor comprising:

• a source region formed on the substrate;
• a drain region formed on the substrate;
• one or more fins interconnecting the source region and the drain region;
• and
• a gate electrode overlying the fins, a surface of the gate electrode having a substantially planar surface, wherein the gate electrode comprises a polymer with metallic particles.

A transistor formed on a substrate, the transistor comprising:

• a source region formed on the substrate;
• a drain region formed on the substrate;
• one or more fins interconnecting the source region and the drain region;
• and
• a gate electrode overlying the fins, a surface of the gate electrode having a substantially planar surface, wherein the gate electrode is formed from a liquid metal.