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US 7,094,643 B2Granted
Method of forming gate of flash memory cell
AssigneeDongbuAnam Semiconductor Inc.
InventorChul Jin Yoon
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Abstract
A method of forming a gate of a flash memory cell, by which a coupling effect between floating and control gates can be enhanced by forming a polysilicon spacer in forming the floating gate to increase a surface area of the floating gate. The gate is formed by forming a nitride layer pattern on a substrate to define a prescribed space, forming a polysilicon spacer at a sidewall of the nitride layer pattern within the defined space on the first polysilicon, and removing the nitride layer pattern.
Claims6
A method of forming a gate of a flash memory cell, comprising the steps of:
- forming a nitride layer pattern on a substrate to define a prescribed space for a floating gate;
- forming a first polysilicon on the substrate within the defined space;
- forming a second polysilicon over the substrate including the first polysilicon;
- forming a polysilicon spacer at a sidewall of the nitride layer pattern within the defined space on the first polysilicon by etching the second polysilicon until at least a portion of the first polysilicon is exposed;
- and
- removing the nitride layer pattern.
3 more elements
Dependencies are inferred from the claim text.