Method of forming gate structure
AssigneeNanya Technology Corporation
InventorsJin-Tau Huang, Chung-Peng Hao, Yi-Nan Chen, Tse-Yao Huang
Life of this patent
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Abstract
A method of forming a gate structure. First, a substrate is provided, and a gate oxide layer, a polysilicon layer, a silicide layer, and a cap layer are consecutively formed onto the substrate. Then, an etching process is performed to etch a portion of the cap layer, the silicide layer, and the polysilicon layer and stop on the polysilicon layer for forming a stacked gate. Thereafter, a portion of the silicide layer exposed on sidewalls of the stacked gate is removed to form a recess. A passivation layer is deposited to fill the recess. The remaining polysilicon layer and the gate oxide layer outside the sidewalls of the stacked gate structure are removed.
Claims6
A method of forming a gate structure comprising:
- providing a substrate, and consecutively forming a gate oxide layer, a polysilicon layer, a silicide layer, and a cap layer onto the substrate;
- forming a patterned mask layer on the cap layer;
- patterning the cap layer and the silicide layer to form a first stacked gate structure using the patterned mask layer as a mask;
- removing a portion of the silicide layer exposed on sidewalls of the first stacked gate structure with an etching solution to form a recess;
- depositing a passivation layer onto the polysilicon layer and filling the recess, and performing an anisotropic etching process to remove the passivation layer besides the passivation layer filed in the recess to form a second stacked gate structure;
- removing the polysilicon layer and the gate oxide layer using the second stacked gate structure as a mask;
- and
- removing the patterned mask layer.
Dependencies are inferred from the claim text.