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US 7,094,612 B2Granted
Method of controlling a potential difference between a stencil mask and a substrate of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Shibata, Hisanori Misawa, Kyoichi Suguro
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.
Claims8
A method of manufacturing a semiconductor device comprising:
- setting a stencil mask at a distance above a substrate to be processed, the stencil mask having an opening defining a cross-sectional area through which charged particles are allowed to pass;
- and
- irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and ground, so that the value of the current flowing between the substrate and ground becomes a predetermined value.
A method of manufacturing a semiconductor device comprising:
- setting a stencil mask at a distance above a substrate to be processed, the stencil mask having an opening defining a cross-sectional area through which charged particles are allowed to pass;
- and
- irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a ratio between a value of a current flowing between the substrate and ground and a value of a current flowing between the stencil mask and ground, so that the ratio of the currents becomes a predetermined value.
Dependencies are inferred from the claim text.