Method of developing optimized optical proximity correction (OPC) fragmentation script for photolithographic processing

A program embodied in computer readable medium to develop an optimized layout fragmentation script for an optical proximity correction (OPC) simulation tool, the OPC simulation tool for manipulating an integrated circuit layout corresponding to a layer to be embodied in a wafer by a photolithographic technique, the program comprising:

• a) code that iteratively conducts optical proximity correction on a test pattern layout for each desired permutation of at least one fragmentation parameter associated with the test pattern layout and for each permutation outputs a corrected test pattern layout, wherein the test pattern layout has at least one structure representing a portion of the integrated circuit layout;
• b) code that simulates printing of each corrected test pattern layout;
• and
• c) code that analyzes each simulated printing to select one of the permutations of the at least one fragmentation parameter to apply to the integrated circuit layout prior to correction with the OPC simulation tool.