US 7,079,307 B2Granted

Wavelength conversion device with avalanche multiplier

AssigneeNational Research Council of Canada

InventorsHui Chun Liu, Dayan Ban, Hui Luo

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Abstract

A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.

Claims20

Dependent claims

A wavelength conversion device comprising:

a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength;
an avalanche multiplier for amplifying said photo current;
and
a light emitting element driven by said amplified photocurrent to produce radiation at a second wavelength different from said first wavelength and corresponding to detected radiation at said first wavelength;
wherein said photodetector, said avalanche multiplier, said light emitting element are arranged in a stacked innervated structure selected from the group consisting of:
a structure wherein said photodetector, said avalanche multiplier, and said light emitting element are located on different wafers which are fusion bonded together, and a structure wherein functional layers of said photodetector, said avalanche multiplier, and said light emitting element are epitaxial layers grown on a common substrate.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/685,538Filed 16 Oct 2003
Published: US 2005/0083567 A121 Apr 2005
Granted: 18 Jul 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10F 55/255
Wherein the radiation-sensitive devices and the electric light source are all semiconductor devices: formed in, or on, a common substrate
H10F 77/14
Semiconductor bodies: shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10F 77/413
Optical elements or arrangements: directly associated or integrated with the devices, e.g. back reflectors
H10H 29/10
Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00:…

Family

US 2005/0083567 A1Pre-grant publication · published 21 Apr 2005
US 7,079,307 B2This patent

From the US filing history. Foreign family members aren’t listed.

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