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US 7,079,183 B1Granted
Charge transfer device for increasing data rate and reducing power consumption
AssigneeFuji Photo Film Co., Ltd.
InventorTetsuo Yamada
Life of this patent
Estimating the term…
Abstract
A charge transfer device having: a semiconductor substrate; a charge transfer path formed in the semiconductor substrate and made of a first conductivity type semiconductor layer; a plurality of charge transfer electrodes formed near above the charge transfer path; and a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in the charge transfer path to the charge transfer electrodes or a second pulse signal train for (n+1)-phase driving of charges in the charge transfer path to the charge transfer electrodes.
Claims9
A charge transfer device comprising:
- a semiconductor substrate;
- a charge transfer path formed in said semiconductor substrate and made of a first conductivity type semiconductor layer, said charge transfer path having first barrier layers having a high potential and first well layers having a low potential, disposed alternately;
- a plurality of first and second charge transfer electrodes alternately formed near above the first barrier layers and first well layers of said charge transfer path;
- a plurality of charge transfer electrode pairs each having adjacent first and second two charge transfer electrodes connected together;
- a third pulse signal generator circuit for applying either a fourth pulse signal train of two-phase for 2-phase driving of charges in said charge transfer path to two charge transfer electrode pairs or a fifth pulse signal train for 2k-phase driving or more of charges in said charge transfer path to the charge transfer electrode pairs;
- a charge storage region formed adjacent to a final stage of the charge transfer electrodes for temporarily storing charges transferred in said charge transfer path;
- and
- a charge detecting region for detecting an amount of charges stored in said charge storage region.
5 more elements
A charge transfer device comprising:
- a semiconductor substrate;
- a charge transfer path formed in said semiconductor substrate and made of a first conductivity type semiconductor layer;
- a plurality of charge transfer electrodes formed near above said charge transfer path;
- and
- a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in said charge transfer path to said charge transfer electrodes or a second pulse signal train for (n+1)-phase driving of charges in said charge transfer path to said charge transfer electrodes;
- a charge storage region formed adjacent to a final stage of the charge transfer electrodes for temporarily storing charges transferred in said charge transfer path;
- and
- a charge detecting region for detecting an amount of charges stored in said charge storage region.
5 more elements
A charge transfer device comprising:
- a semiconductor substrate;
- a charge transfer path formed in said semiconductor substrate and made of a first conductivity type semiconductor layer;
- a plurality of charge transfer electrodes formed near above said charge transfer path;
- and
- a second pulse signal generator circuit for applying either a first pulse signal train for n-phase driving (n being an integer larger than 1) of charges in said charge transfer path to said charge transfer electrodes or a third pulse signal train for (n×m)-phase driving (m being an integer larger than 1) of charges in said charge transfer path to said charge transfer electrodes;
- a charge storage region formed adjacent to a final stage of the charge transfer electrodes for temporarily storing charges transferred in said charge transfer path;
- and
- a charge detecting region for detecting an amount of charges stored in said charge storage region.
5 more elements
A charge transfer device comprising:
- a semiconductor substrate;
- a charge transfer path formed in said semiconductor substrate and made of a first conductivity type semiconductor layer, said charge transfer path having first barrier layers and second well layers alternately disposed adjacent to each other;
- a plurality of charge transfer electrodes formed adjacent to each other above said charge transfer path;
- a second pulse signal generator circuit for applying either a first pulse signal train for n-phase driving (n being an integer larger than 1) of charges in said charge transfer path to said charge transfer electrodes or a third pulse signal train for (n×m)-phase driving (m being an integer larger than 1) of charges in said charge transfer path to said charge transfer electrodes;
- a charge storage region formed adjacent to a final stage of the charge transfer electrodes for temporarily storing charges transferred in said charge transfer path;
- and
- a charge detecting region for detecting an amount of charges stored in said charge storage region,
- wherein said charge storage region comprises:
- a second barrier layer and a second well layer formed adjacent to each other in said charge transfer path;
- a third charge transfer electrode and a fourth charge transfer electrode formed above the second barrier layer and the second well layer;
- and
- a stored charge output pulse generator circuit connected to said third charge transfer electrode and said fourth charge transfer electrode, for generating a stored charge output pulse, and
- wherein an electric capacity of the second well layer has an electric capacity by (n×m−3) times or more larger than an electric capacity of the first well.
10 more elements
Dependencies are inferred from the claim text.