Non-volatile memory parallel processor
AssigneeHewlett-Packard Development Company, L.P.
InventorsManish Sharma, Frederick A. Perner
Life of this patent
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Abstract
The invention includes a parallel processor. The parallel processor includes a plurality of non-volatile memory cells. The parallel processor additionally includes a plurality of processor elements. At least one non-volatile memory cell corresponds with each of the processor elements. The processor elements each access data from at least one corresponding non-volatile memory cell. The processor elements perform processing on the data. The non-volatile memory cells can include magnetic memory cells.
Claims28
A parallel processor comprising:
- a plurality of shared memory cells, each shared memory cell comprising a magnetic memory cell integrated with a DRAM cell, wherein a word line (WL) is connected to the magnetic memory cell and the DRAM cell;
- a plurality of processor elements, each processor element being integrated with a shared memory cell, each processor elements accessing data from a corresponding shared memory cell that is integrated with the processor element, and performing processing on the data.
A method of parallel processing, comprising:
- storing data in a plurality of magnetic memory cells;
- processing the data with a plurality of processor elements which are integrated with the magnetic memory cells and DRAM cells, each processor element accessing data from the integrated magnetic memory cell and integrated DRAM cell by selecting a word line (WL) connected to the magnetic memory cell and the DRAM cell, and performing processing on the data.
A computing system comprising:
- a central processing unit;
- a parallel processor connected to the central processing unit, the parallel processor comprising:
- a plurality of processor elements, each processor element being integrated with a magnetic memory cell, each processor elements accessing data from the magnetic memory cell and an integrated DRAM cells, wherein a word line (WL) is connected to the magnetic memory cell and the DRAM cell.
Dependencies are inferred from the claim text.