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US 7,078,810 B2Granted
Semiconductor device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGin Jie Wang, Chao-Hsien Peng, Chii-Ming Wu, Chih-Wei Chang, Shau-Lin Shue
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Abstract
A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
Claims9
A semiconductor device, comprising:
- a substrate;
- at least one transistor on the substrate;
- a first dielectric layer on the transistor and having an opening exposing an active region of the transistor;
- an atomic layer deposited (ALD) TaN barrier conformably lining the opening, at a thickness less than 20 Å;
- and
- a copper layer over the atomic layer deposited (ALD) TaN barrier, filling the opening.
3 more elements
A semiconductor device, comprising:
- a substrate;
- at least one transistor on the substrate;
- a first dielectric layer covering the transistor and having an first opening exposing an active region of the transistor;
- a first atomic layer deposited (ALD) TaN barrier conformably lining the first opening, at a thickness less than 20 Å;
- a first copper layer over the first atomic layer deposited (ALD) TaN barrier, filling the first opening;
- a second dielectric layer over the first dielectric layer and having a second opening that exposes a portion of the first copper layer;
- a second atomic layer deposited (ALD) TaN barrier conformably lining the second opening, at a thickness less than 20 Å;
- and
- a second copper layer over the second ALD TaN barrier layer, filling the second opening.
6 more elements
Dependencies are inferred from the claim text.