Corrosion-resistant copper bond pad and integrated device

A method of forming a corrosion-resistant capped copper bond pad, comprising:

• providing a plurality of copper bond pads on a semiconductor substrate;
• plating an activation layer with one of immersion palladium, electroless cobalt, or immersion ruthenium on the copper bond pads;
• plating a first intermediate layer with electroless nickel-boron alloy on the activation layer;
• plating a second intermediate layer with one of electroless nickel or electroless palladium on the first intermediate layer;
• plating an immersion gold layer on the second intermediate layer;
• and
• plating an electroless gold layer on the immersion gold, wherein the electroless gold layer has a thickness between 0.1 microns and 1.5 microns.

A semiconductor wafer with a plurality of corrosion-resistant capped copper bond pads, comprising:

• a plurality of copper bond pads on a surface of the semiconductor wafer;
• an activation layer comprising one of immersion palladium, electroless cobalt, or immersion ruthenium disposed on the copper bond pads;
• a first intermediate layer of electroless nickel-boron alloy disposed on the activation layer;
• a second intermediate layer comprising one of electroless nickel or electroless palladium disposed on the first intermediate layer;
• an immersion gold layer disposed on the second intermediate layer;
• and
• an electroless gold layer disposed on the immersion gold, wherein the electroless gold layer has a thickness between 0.1 microns and 1.5 microns.

A capped copper bond pad for a corrosion-resistant integrated device, comprising:

• an activation layer comprising one of immersion palladium, electroless cobalt, or immersion ruthenium disposed on at least one copper bond pad;
• a first intermediate layer of electroless nickel-boron alloy disposed on the activation layer;
• a second intermediate layer comprising one of electroless nickel or electroless palladium disposed on the first intermediate layer;
• an immersion gold layer disposed on the second intermediate layer;
• and
• an electroless gold layer disposed on the immersion gold, wherein the electroless gold layer has a thickness between 0.1 microns and 1.5 microns.