Back to results
US 7,078,751 B2Granted
Solid-state imaging device
AssigneeSharp Kabushiki Kaisha
InventorTakashi Watanabe
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSharp Kabushiki Kaisha
InventorTakashi Watanabe
Estimating the term…
The sources or drains 14 of transistors and photodiodes 13, which constitute shaded pixels covered with a shading layer 16, are formed on a surface of a highly doped well 20 provided on a lowly doped substrate 11. Therefore, a potential barrier ΔV is formed extended from the lowly doped substrate 11 toward the highly doped well 20. Even if intense spot light is made incident on some of light-receiving pixels and part of light 17 reaches a neutral region of the lowly doped substrate 11, part of diffused charges 18 photoelectrically converted there cannot intrude into the highly doped well 20. Therefore, an output signal level of the shaded pixels does not change, and a black reference level can be maintained.
A solid-state imaging device in which a plurality of pixels each comprised of a photodiode and a transistor are arranged on a surface of a semiconductor substrate, said plurality of pixels including light-receiving pixels having light incident on the respective photodiodes thereof and shaded pixels having no light incident on the respective photodiodes thereof, and in which a black reference level is obtained on the basis of an output signal from said shaded pixels, wherein
A solid-state imaging device in which a plurality of pixels each comprised of a photodiode and a transistor are arranged on a surface of a superficial portion of a semiconductor substrate, said plurality of pixels including light-receiving pixels where light is incident on the photodiode and shaded pixels where no light is incident on the photodiode, and a black reference level is obtained on the basis of an output signal from the shaded pixels, wherein
Dependencies are inferred from the claim text.