Ion beam scanning control methods and systems for ion implantation uniformity

A calibration system for calibrating an ion beam scanner in an ion implantation system, the calibration system comprising:

• a dosimetry system operable to measure a plurality of initial current density values at a corresponding plurality of locations along a scan direction in a workpiece location of an ion implantation system;
• and
• a control system operably coupled with the dosimetry system and a power supply associated with a beam scanner of the ion implantation system, the control system being operable to cause the scanner to scan an ion beam across the workpiece location of the ion implantation system in the scan direction one or more times according to a plurality of initial voltage scan intervals and a corresponding plurality of initial voltage scan time values such that the dosimetry system can measure a plurality of initial current density values at a plurality of locations along a scan direction in a workpiece location of an ion implantation system;
• wherein the initial current density values individually correspond to one of the plurality of initial voltage scan intervals and to one of the corresponding plurality of initial scan time values;
• and
• wherein the control system is further operable to create a system of linear equations based on the measured initial current density values and the initial scan time values, and to determine a set of scan time values for the voltage scan intervals corresponding to a solution to the system of linear equations that reduces current density profile deviations.