Dual layer patterning scheme to make dual damascene

A method for making a dual damascene pattern using a dual layer patterning scheme and a single etch process comprising:

• providing a wafer having at least one insulative layer formed thereon;
• depositing a first photoresist layer over the at least one insulative layer;
• patterning a first image in the first photoresist layer;
• irradiating the first patterned photoresist layer with ultraviolet light to stabilize the first patterned photoresist layer;
• depositing a second photoresist layer on the first patterned photoresist layer;
• patterning a second image in the second photoresist layer;
• etching the at least one insulative layer through the first patterned photoresist layer and the second patterned photoresist layer simultaneously in the single etch process, wherein the first image and the second image are substantially formed in the at least one insulative layer;
• and
• removing the first patterned and the second patterned photoresist layers.

A method for making a dual damascene pattern using a dual layer patterning scheme comprising:

• providing a wafer having at least one insulative layer formed thereon;
• depositing a positive tone photoresist layer over the at least one insulative layer;
• patterning a first image in the positive tone photoresist layer;
• irradiating selected portions of the positive tone photoresist through a mask to effect an image-wise pattern transfer, wherein irradiated portions of the positive tone photoresist layer are removed;
• polymerizing first patterned photoresist layer using ultraviolet light radiation;
• depositing a negative tone photoresist layer over patterned positive tone photoresist layer;
• irradiating selected portions of the negative tone photoresist through a mask to effect an image-wise pattern transfer, wherein non-irradiated portions of the negative tone photoresist layer are removed;
• etching the at least one insulative layer through the patterned positive tone photoresist layer and the patterned negative photoresist layer simultaneously in a single etch process, wherein the first image and the second image are substantially formed in the at least one insulative layer;
• and
• removing the patterned positive tone and the patterned negative tone photoresist layers.