Method for depositing III-V semiconductor layers on a non-III-V substrate
AssigneeAixtron SE
InventorsHolger Jürgensen, Alois Krost, Armin Dadgar
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Abstract
The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.
Claims18
Method for applying III-V semiconductor layers to a non-III-V substrate, in particular a silicon substrate, by introducing gaseous starting substances into the process chamber of a reactor, the III-V layers being deposited on the surface of a first substrate having an orientation that is optimized for the deposition of the III-V layers, in particular a silicon substrate, characterized in that the layers are detached together with a thin film of the first substrate, the detached layers together with the thin film of the first substrate are applied to a second substrate, in particular to a silicon substrate, and lateral regions of the applied layers are removed down into the second substrate, if appropriate after a masking step.
Dependencies are inferred from the claim text.