Method for forming a thin film resistor structure

A method for forming a thin film resistor on a semiconductor substrate having a gate structure disposed thereover, said method comprising:

• forming a first layer of dielectric material that overlies said gate structure;
• forming an opening in said first layer of dielectric material, said opening extending through said first layer of dielectric material so as to expose a portion of a conductive layer of said gate structure;
• depositing a layer of titanium nitride using a chemical vapor deposition process, portions of said layer of titanium nitride extending within said opening so as to partially fill said opening;
• performing a rapid thermal anneal in an oxygen environment so as to form a titanium oxynitride film;
• depositing a second layer of dielectric material, said second layer of dielectric material overlying said titanium oxynitride film and filling a remaining portion of said opening;
• etching a portion of said second layer of dielectric material so as to form a dielectric plug that fills said remaining portion of said opening;
• and
• etching portions of said titanium oxynitride film so as to form a titanium oxynitride structure having a first portion that overlies said exposed portion of said conductive layer and having a second portion that overlies a top surface of said first layer of dielectric material and having a third portion that extends vertically between said first portion and said second portion.