Method of manufacturing a semiconductor device by providing a mirror in the attenuation region

A method of manufacturing a semiconductor device comprising:

• changing a sectional shape of a laser light emitted from a laser into a first shape by a means, wherein the first shape has an elongated cross section;
• homogenizing an energy density distribution in an end portion of the elongated cross section of the laser light by a mirror;
• and
• irradiating a surface to be irradiated with the laser light having the homogenized energy density while relatively shifting the surface to be irradiated.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• converting a first energy density distribution of a laser light emitted from a laser into a second energy density distribution by a means, wherein the second energy density has an attenuation region;
• homogenizing an energy density in an end portion of the laser light having the second energy density distribution by providing a mirror in the attenuation region;
• and
• irradiating the semiconductor film with the laser light having the homogenized energy density while relatively shifting the semiconductor film.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• changing a sectional shape of a laser light emitted from a laser into a first shape by a means, wherein the first shape has an elongated cross section;
• homogenizing an energy density distribution in an end portion of the elongated cross section of the laser light by a mirror;
• and
• irradiating the semiconductor film with the laser light having the homogenized energy density distribution while relatively shifting the semiconductor film.