Increased mobility from organic semiconducting polymers field-effect transistors

A process for constructing an organic field effect transistor, comprising the steps of:

• a) providing a substrate having a gate electrode;
• b) providing the substrate with source and drain electrodes;
• and
• c) depositing upon the substrate directly from solution, a layer of semiconducting regioregular head-to-tail poly 3-hexylthiophene, characterized in that said transistor has a high mobility of about 0.2 cm2V−1s−1 correlating to an improved structural order of the regioregular head-to-tail poly 3-hexylthiophene layer, said layer having the improved structural order demonstrated by an absorbance of a 0—0 absorption band in an optical spectrum, wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene;
• and
• d) heat treating the layered substrate at about 150° C. to 170° C. for about three minutes in an inert atmosphere.