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US 7,078,156 B2Granted
Negative resist composition comprising base polymer having epoxy ring and Si-containing crosslinker and patterning method for semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Jun Choi
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Abstract
A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.
Claims14
A negative resist composition comprising:
- an alkali-soluble base polymer having an epoxy ring substituent, said alkali-soluble base polymer having an epoxy ring substituent comprising one of an epoxy novolac resin, an epoxy-substituted polyhydroxystyrene, a glycidyl (meth)acrylate repeating unit or a (meth)acrylate repeating unit with an alicyclic epoxy group;
- a crosslinker comprising silicon and multiple hydroxy groups;
- and
- a photoacid generator.
1 more element
A negative resist composition comprising:
- an alkali-soluble base polymer having an epoxy ring substituent;
- a crosslinker comprising silicon and multiple hydroxy groups, said silicon-containing crosslinker is present in the range of about 5.0–50% by weight based on the total weight of the alkali-soluble base polymer;
- and
- a photoacid generator.
1 more element
Dependencies are inferred from the claim text.