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US 7,078,136 B2Granted
Thermally-generated mask pattern
AssigneeIntel Corporation
InventorPei-Yang Yan
Life of this patent
Estimating the term…
Abstract
A mask having a first region and a second region; the first region having a multilayer mirror over a substrate, the multilayer mirror having alternating layers of a first material and a second material, the first material having a high index of refraction, the second material having a low index of refraction; and the second region having a compound of the first material and the second material over the substrate.
Claims14
An EUV mask blank comprising:
- a first region and a second region;
- said first region not covered by an absorber, said first region comprising a capping layer disposed over a multilayer mirror, said multilayer mirror comprising alternating layers of a first material and a second material disposed over a substrate, said multilayer mirror comprising a peak reflectivity of 60–75%;
- and
- said second region comprising a third material disposed over said substrate, said third material being different from said first material and said second material.
1 more element
An EUV mask blank comprising:
- an upper surface with a difference in step height, said step height comprising:
- a higher portion comprising a capping layer disposed over a multilayer mirror, said multilayer mirror comprising alternating layers of a first material and a second material disposed over a substrate, said multilayer mirror comprising a peak reflectivity of 60–75% said higher portion not covered by an absorber and
- a lower portion comprising fiducial marks over said substrate and
- a lower surface without a difference in step height.
1 more element
Dependencies are inferred from the claim text.