Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film
AssigneeAlps Electric Co., Ltd.
InventorsMasamichi Saito, Naoya Hasegawa, Yosuke Ide, Kenichi Tanaka
Life of this patent
Estimating the term…
Abstract
A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.
Claims13
A method of producing an exchange coupling film comprising an antiferromagnetic layer, a ferromagnetic layer, contacting said antiferromagnetic layer at an interface therebetween, and a seed layer comprising a (111) plane of face-centered cubic crystal, which seed layer contacts said antiferromagnetic layer at an interface therebetween on a side opposite said ferromagnetic layer, said method comprising:
- forming said seed layer such that said (111) plane of face-centered cubic crystal is preferentially oriented in a direction parallel to said interface between said seed layer and said antiferromagnetic layer, while creating a non-aligned state at at least a part of said interface between said antiferromagnetic layer and said seed layer;
- wherein said antiferromagnetic layer and said ferromagnetic layer have different lattice constants at at least a part of said interface therebetween;
- and
- effecting a heat-treatment after said forming, so as to develop an exchange coupling magnetic field at said interface between said antiferromagnetic layer and said ferromagnetic layer.
Dependencies are inferred from the claim text.