Atomic layer deposition methods

An atomic layer deposition method comprising:

• exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate, the first precursor comprising a chelate of Al(NR1R2)x(NR3(CH2)zNR4R5)y or Al(NR1R2)x(NR3(CH2)zOR4)y;
• where x is 0, 1, or 2;
• y is 3−x;
• z is an integer from 2 to 8;
• and R1 to R5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms;
• reacting a second precursor with the first monolayer and forming a product layer.

An atomic layer deposition method comprising:

• exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate at a temperature of from about 150° C. to about 250° C., the first precursor comprising Al(N(CH3)2)2(N(CH3)CH2CH2N(CH3)2) and the substrate comprising at least one of metal oxide, platinum, titanium, and TiN;
• purging excess first precursor from the over the substrate;
• reacting a second precursor with the first monolayer and forming a product layer containing at least one of AlN or Al2O3, the second precursor comprising at least one of O2, O3, H2O, ammonia, hydrazine, alkyl-hydrazine compounds, and other hydrazine derivatives;
• purging excess second precursor from the over the substrate;
• and
• successively repeating exposure and purging of the first and second precursors to form additional product layers.