Programmable logic devices with silicon-germanium circuitry and associated methods

A data-processing system, comprising:

• a programmable logic device (PLD), comprising:
• programmable logic circuitry configured to allow programming the functionality of the programmable logic device (PLD) in response to programming information, the programmable logic circuitry further configured to reside in a silicon substrate;
• and
• memory circuitry fabricated using silicon-germanium-based circuitry, the memory circuitry configured to provide the programming information to the programmable logic circuitry, wherein the silicon-germanium-based circuitry comprises a first oxide layer deposited above the silicon substrate, a first seed layer of silicon deposited above the first oxide layer, and a first layer of silicon-germanium deposited above the first seed layer of silicon.

A programmable logic device (PLD), comprising:

• a first block of circuitry within the programmable logic device, the first block of circuitry including programmable logic circuitry;
• and
• a second block of circuitry outside the data path of the programmable logic device, the second block of circuitry coupled to the first block of circuitry,
• wherein the second block of circuitry is fabricated using silicon-germanium, and wherein the programmable logic device (PLD) is configured to reside in a data-processing system, wherein the second block of circuitry is fabricated in a plurality of layers integrated vertically with respect to a silicon substrate that includes the first block of circuitry, the plurality of layers comprising a first dielectric layer is disposed above the silicon substrate, and a first seed layer of silicon deposited above the first dielectric layer.

A method of fabricating a programmable logic device (PLD), comprising:

• fabricating a programmable electronic circuit in a silicon substrate;
• fabricating a memory circuit using silicon-germanium, wherein the memory circuit couples to the programmable electronic circuit;
• fabricating programmable interconnect within the PLD;
• and
• coupling the programmable interconnect to at least one of the programmable electronic circuitry and the memory circuitry, wherein fabricating the memory circuitry further
• comprises:
• depositing a first oxide layer above the silicon substrate;
• depositing a first seed layer of silicon above the first oxide layer;
• and
• depositing a first layer of silicon-germanium above the first seed layer of silicon.

A method of fabricating a programmable logic device (PLD), comprising:

• fabricating a first block of circuitry within the programmable logic device, the first block of circuitry including programmable logic circuitry, the first block of circuitry in a silicon substrate;
• fabricating a second block of circuitry outside the data path of the programmable logic device, the second block of circuitry coupled to the first block of circuitry, the second block of circuitry by integrating the second block of cicuitry vertically with respect to the silicon substrate,
• wherein the second block of circuitry is fabricated using silicon-germanium, and
• wherein the programmable logic device (PLD) is configured to reside in a data-processing system;
• wherein fabricating the second block of circuitry further comprises fabricating a first dielectric layer above the silicon substrate;
• fabricating a first seed layer of silicon above the first dielectric layer;
• and fabricating a first layer of silicon-germanium above the first seed layer of silicon.