Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same

A metallization structure for a semiconductor device, composing:

• a substrate having a metal layer extending over the substrate, the metal layer at least underlying a conductive line, the conductive line for transmitting a signal across the substrate;
• a dielectric layer having an aperture therethrough defined by at least one sidewall and exposing the metal layer, the at least one sidewall of the aperture defining the conductive line;
• a metal spacer abutting at least one sidewall of the at least one sidewall of the aperture and in contact with the dielectric layer, the metal spacer in contact with the underlying metal layer;
• and
• a conductive layer of the conductive line in contact with the metal layer and the metal spacer, the metal spacer and the conductive layer substantially filling the aperture, the conductive layer having an upper surface substantially coincident with an upper surface of the dielectric layer.

A metallization structure for a semiconductor device, comprising:

• a substrate having a metal layer extending over the substrate, the metal layer at least underlying a conductive line, the conductive line for transmitting a signal across the substrate;
• a dielectric layer having an aperture therethrough defined by at least one sidewall and exposing the metal layer, the at least one sidewall of the aperture defining the conductive line;
• a metal spacer abutting at least one sidewall of the at least one sidewall of the aperture and in contact with the dielectric layer, the metal spacer in contact with the underlying metal layer;
• a conductive layer of the conductive line in contact with the metal layer and the metal spacer, the metal spacer and the conductive layer nearly filling the aperture;
• and
• at least one upper metal layer on the conductive layer comprising Ti, Ta, W, Co or Mo or an alloy or a compound of any thereof, including TaN or TiN, the at least one upper metal layer being disposed within the aperture laterally adjacent the metal spacer and having an upper surface substantially coincident with an upper surface of the dielectric layer and an uppermost extent of the metal spacer.

A structure for transmitting a signal across a semiconductor device, the structure comprising:

• a substrate comprising a substantially planar upper surface;
• and
• a conductive line extending over the upper surface and isolated therefrom by a dielectric layer at least underlying the conductive line, the conductive line consisting essentially of:
• a metal layer above the dielectric layer, the metal layer defining a pattern on a portion of the substrate upper surface;
• a single conducting layer overlying and substantially coextensive with the metal layer, the metal layer and the single conducting layer having substantially aligned sidewalls, wherein an upper surface of the single conductive layer defines an upper surface of the conductive line, the single conducting layer selected from the group consisting of aluminum and copper;
• and
• metal spacers flanking and extending at least substantially to a height of the sidewalls of the single conducting layer and metal layer.

A structure for transmitting a signal laterally across a substrate of a semiconductor device, the structure comprising:

• a substrate having a metal layer of a conductive line disposed thereon;
• a dielectric layer above the metal layer, the dielectric layer having an aperture therethrough defined by at least one sidewall and exposing the metal layer, the aperture at least extending a length of the conductive line;
• a metal spacer flanking at least one sidewall of the at least one sidewall of the aperture and in contact with the dielectric layer, the metal spacer in contact with the underlying metal layer;
• and
• a conductive layer of the conductive line in contact with the metal layer and the metal spacer, the metal spacer and the conductive layer substantially filling the aperture, the conductive layer having an upper surface substantially coincident with an upper surface of the dielectric layer.

A structure for transmitting a signal laterally across a substrate of a semiconductor device, the structure comprising:

• a substrate having a metal layer of a conductive line disposed thereon;
• a dielectric layer above the metal layer, the dielectric layer having an aperture therethrough defined by at least one sidewall and exposing the metal layer, the aperture at least extending a length of the conductive line;
• a metal spacer flanking at least one sidewall of the at least one sidewall of the aperture and in contact with the dielectric layer, the metal spacer in contact with the underlying metal layer;
• a conductive layer of the conductive line in contact with the metal layer and the metal spacer, the metal spacer and the conductive layer nearly filling the aperture;
• and
• at least one upper metal layer on the conductive layer and comprising Ti, Ta, W, Co or Mo or an alloy or a compound of any thereof, including TaN or TiN, the at least one upper metal layer being disposed within the aperture laterally adjacent the metal spacer and having an upper surface substantially coincident with an upper surface of the dielectric layer and an uppermost extent of the metal spacer.