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US 7,071,528 B2Granted
Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof
AssigneeNational Chiao Tung University
InventorsMing-Dou Ker, Kuo-Chun Hsu
Life of this patent
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Abstract
A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
Claims6
A double-triggered silicon controlling rectifier, comprising:
- a P-type substrate;
- a first N-well region, formed within the P-type substrate;
- a second N-well region, formed within the P-type substrate, and on one side of the first N-well region;
- a third N-well region, formed within the P-type substrate, and on another side of the first N-well region, opposite to the second N-well region;
- a plurality of N+ diffusion areas, comprising:
- a first N+ diffusion area, formed in the first N-well region and coupled to an external power terminal;
- a second N+ diffusion area, formed in the first N-well region and on one side of the first N+ diffusion area, as a N-type trigger terminal of the double-triggered silicon controlling rectifier;
- a third N+ diffusion area, formed in the first N-well region and on another side of the first N+ diffusion area, opposite to the second N+ diffusion area as the N-type trigger terminal of the double-triggered silicon controlling rectifier;
- a fourth N+ diffusion area, partially formed in the third N-well region and partially formed in the P-type substrate, and on one side of the second N+ diffusion region, opposite to the first N+ diffusion region as a cathode of the double-triggered silicon controlling rectifier;
- and
- a fifth N+ diffusion, partially formed in the second N-well region and partially formed in the P-type substrate, and on one side of the third N+ diffusion region, opposite to the first N+ diffusion region as the cathode of the double-triggered silicon controlling rectifier;
- a plurality of P+ diffusion areas, comprising:
- a first P+ diffusion area, formed within the first N-well region and between the first N+ diffusion area and the second N+ diffusion area, as an anode of the double-triggered silicon controlling rectifier;
- a second P+ diffusion area, formed within the first N-well region and between the first N+ diffusion area and the third N+ diffusion area, as the anode of the double-triggered silicon controlling rectifier;
- a third P+ diffusion area, formed within the P-type substrate between the first and the third N-well regions, and between the second and the fourth N+ diffusion areas, as a P-type trigger terminal of the double-triggered silicon controlling rectifier;
- a fourth P+ diffusion area, formed within the P-type substrate between the first and the second N-well regions, and between the third and the fifth N+ diffusion areas, as the P-type trigger terminal of the double-triggered silicon controlling rectifier;
- a fifth P+ diffusion area, formed within the P-type substrate and on one side of the fourth N+ diffusion area, opposite to the third P+ diffusion area, as a ground terminal of the double-triggered silicon controlling rectifier;
- and
- a sixth P+ diffusion area, formed within the P-type substrate and on one side of the fifth N+ diffusion area, opposite to the fourth P+ diffusion area, as the ground terminal of the double-triggered silicon controlling rectifier;
- and
- a plurality of isolation structures, formed within the P-type substrate and between spaces of the pluralities of N+ and P+ diffusion areas.
18 more elements
Dependencies are inferred from the claim text.