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US 7,071,516 B2Granted
Semiconductor device and driving circuit for semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTomohide Terashima
Life of this patent
Estimating the term…
Abstract
A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electrode (15) provided via a gate oxide film (21) on a surface of an N− epitaxial layer (2) between the P diffusion regions (5 and 6). The gate oxide film (21) is formed in a thickness having a gate breakdown voltage higher than the element breakdown voltage of a typical field oxide film and the like.
Claims10
A semiconductor device comprising:
- an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes;
- and
- a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during an ON state of said second insulated gate transistor, wherein
- a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT.
1 more element
A driving circuit for a semiconductor device, wherein said semiconductor device comprises:
- an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes;
- and
- a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during an ON state of said second insulated gate transistor, wherein
- a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises:
- first control signal supply means supplying a first control signal to a gate electrode of said first insulated gate transistor;
- and
- second control signal supply means supplying a second control signal obtained in response to said first control signal to the gate electrode of said second insulated gate transistor, wherein
- said second control signal supply means generates, as said second control signal, a first voltage for turning said second insulated gate transistor off when said first control signal provides instructions to turn said first insulated gate transistor on, and generates a second voltage for turning said second insulated gate transistor on when said first control signal provides instructions to turn said first insulated gate transistor off.
5 more elements
A driving circuit for a semiconductor device, wherein said semiconductor device comprises:
- an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes;
- and
- a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during a ON state of said second insulated gate transistor, wherein
- a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises:
- a coil having one end applied with a constant voltage and the other end connected to the emitter electrode of said bipolar transistor;
- control signal supply means supplying a first control signal to a gate electrode of said first insulated gate transistor;
- and
- fixed voltage supply means supplying a fixed potential obtained by shifting said constant voltage in the direction of turning said second insulated gate transistor on, to the gate electrode of said second insulated gate transistor.
5 more elements
A driving circuit for a semiconductor device, wherein said semiconductor device comprises:
- an insulated gate bipolar transistor (IGBT) of a first conductivity type including a first insulated gate transistor of said first conductivity type and a bipolar transistor of a second conductivity type connected between first and second main electrodes;
- and
- a second insulated gate transistor of said second conductivity type configured to short-circuit a base and emitter of said bipolar transistor during a ON state of said second insulated gate transistor, wherein
- a thickness of a gate insulating film of said second insulated gate transistor is so set as to satisfy a prescribed breakdown voltage higher than an element breakdown voltage of said IGBT, and said driving circuit comprises:
- a coil having one end applied with a constant voltage and the other end connected to the emitter electrode of said bipolar transistor;
- and
- a control signal supply means supplying the same control signal to a gate electrodes of both said first and second insulated gate transistors.
4 more elements
Dependencies are inferred from the claim text.