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US 7,071,507 B2Granted
High-voltage CMOS-compatible capacitors
AssigneeImpinj, Inc.
InventorsChristopher J. Diorio, Frederic J. Bernard
Life of this patent
Estimating the term…
Abstract
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
Claims33
A stacked capacitor comprising:
- a substrate;
- and
- first and second capacitors each comprising;
- an n-well formed in the substrate and comprising an electrode of the stacked capacitor, each n-well being isolated from the substrate;
- a tunneling dielectric disposed atop each of the n-wells;
- and
- a floating electrode comprising polysilicon disposed on the tunneling dielectric atop at least a portion of each of the n-wells and extending there between.
4 more elements
A stacked capacitor comprising:
- a substrate;
- and
- first and second capacitors each comprising:
- a semiconductive well supported by the substrate and comprising an electrode of the stacked capacitor, each well being electrically isolated from the substrate and from each other;
- a tunneling dielectric disposed atop each of the wells;
- and
- a floating electrode comprising polysilicon disposed on the tunneling dielectric atop at least a portion of each of the wells and extending there between.
4 more elements
A stacked capacitor comprising:
- first and second capacitor means sharing a common floating electrode;
- and
- charge injection and extraction means coupled to the first and second capacitor means and configured to set a voltage of the common floating electrode to a value less than a working voltage of the stacked capacitor.
Dependencies are inferred from the claim text.