Semiconductor structure with a switch element and an edge element

A semiconductor structure for controlling and switching a current, comprising:

• a) a switch element with:
• a1) a first semiconductor area of a first conductivity type defining therein a path for the current, an anode electrode and a cathode electrode in contact with said first semiconductor area;
• a2) a first depletion zone formed at least partially within said first semiconductor area, and a control electrode disposed to influence said first depletion zone by way of a control voltage for the purpose of controlling the current;
• and
• a3) an island area of a second conductivity type opposite the first conductivity type, said island area being at least partially buried within said first semiconductor area and contacted by way of said cathode electrode;
• b) an edge element with:
• b1) an edge area of the second conductivity type buried at least partially within said first semiconductor area and disposed substantially at a same level as said buried island area;
• and
• b2) an edge termination area of the second conductivity type, adjoining said edge area;
• and
• b3) an electrically conductive connection between said control electrode and said edge area.