III group nitride system compound semiconductor light emitting element and method of making same

A pretreated transparent substrate, comprising:

• a transparent substrate that comprises a material other than a III group nitride system compound semiconductor;
• and
• a convex light trapping member that is formed over a surface of the transparent substrate;
• wherein the light trapping member has a refractive index substantially equal to a refractive index of the transparent substrate or closer to the refractive index of the transparent substrate than a refractive index of a III group nitride system compound semiconductor, and
• wherein an interface is provided between the light trapping member and the transparent substrate.

A light emitting diode, comprising:

• a III group nitride system compound semiconductor light emitting element, comprising:
• a transparent substrate that comprises a material other than a III group nitride system compound semiconductor;
• a convex light trapping member that is formed over a surface of the transparent substrate;
• and
• a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate,
• wherein the light trapping member has a refractive index substantially equal to a refractive index of the transparent substrate or closer to the refractive index of the transparent substrate than a refractive index of the m group nitride system compound semiconductor layer, and
• wherein an interface is provided between the light trapping member and the transparent substrate.