Method to reduce PEB sensitivity of resist
AssigneeCypress Semiconductor Corporation
InventorsChidam Kallingal, Hoyoung Kang, Prakash Krishnan
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Abstract
A method of forming a semiconductor structure, comprises exposing a photoresist layer; followed by heating the photoresist layer to a first temperature for 30 seconds to 3 minutes; followed by heating the photoresist layer to a second temperature for 30 seconds to 3 minutes. The second temperature is 5–15° C. greater than the first temperature.
Claims19
A method of forming a semiconductor structure, comprising:
- exposing a photoresist layer;
- followed by
- a first heating of the photoresist layer to a first temperature for 30 seconds to 3 minutes;
- followed by
- a second heating of the photoresist layer to a second temperature for 30 seconds to 3 minutes;
- followed by
- developing the photoresist layer;
- wherein the second temperature is 5–15° C. greater than the first temperature.
A method of making an electronic device, comprising:
- forming a semiconductor device by the method of claim 12, and
- forming an electronic device comprising the semiconductor device.
A method of forming semiconductor structures, comprising:
- exposing a photoresist layer;
- followed by
- a first heating of the photoresist layer to a first temperature;
- followed by
- a second heating of the photoresist layer to a second temperature;
- followed by
- developing the photoresist layer;
- wherein the second temperature is 5–15° C. greater than the first temperature, and
- a standard deviation of the critical dimension between wafers is at least 10% smaller than a standard deviation of the critical dimension between wafers otherwise identical without the first heating.
The method of claim 15, wherein the standard deviation of the critical dimension between wafers is at least 15% smaller than the standard deviation of the critical dimension between wafers without the first heating.
A method of making an electronic device, comprising:
- forming a semiconductor device by the method of claim 18, and
- forming an electronic device comprising the semiconductor device.
In a method of forming a semiconductor structure, including patterning a layer by forming the layer on a substrate, applying a photoresist on the layer, exposing the photoresist, performing a post exposure bake, developing the photoresist, and etching the layer, the improvement comprising heating of the photoresist after exposure but prior to the post exposure bake, at a temperature 5–15° C. less than the post exposure bake, for 45 seconds to 3 minutes.
Dependencies are inferred from the claim text.