US 7,071,098 B2 · Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles

Abstract

In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.

Claims19

Dependent claims

A method of fabricating an interconnect for a semiconductor component, comprising:

providing a semiconductor component;
forming an opening which extends entirely through the component, the opening having sidewalls;
depositing a metal nitride along the sidewalls of the opening, the depositing being conducted in a reaction chamber utilizing:
a first precursor containing the metal of the metal nitride;
a second precursor containing the nitrogen of the metal nitride;
and
at least one cycle in which the first and second precursors are in the reaction chamber at different and substantially non-overlapping time intervals relative to one another;
and
plating a second material within the opening and over the metal nitride.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/028,918Filed 3 Jan 2005 · division

Priority

20 Feb 2004

Published

US 2005/0186777 A125 Aug 2005

Granted

4 Jul 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification26 codes

C23C 16/34
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: nitrides
C23C 16/45525
Pulsed gas flow or change of composition over time: atomic layer deposition [ALD]
C23C 18/1608
By direct patterning: from pretreatment step, i.e. selective pre-treatment
C23C 18/1879
Only one step pretreatment: use of metal, e.g. activation, sensitisation with noble metals

Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles

Life of this patent

Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles

Life of this patent

Abstract

Claims19