Method for improved process latitude by elongated via integration

A method for fabricating an interconnect dual damascene structure which comprises:

• a) providing a layer of at least one dielectric on a substrate surface;
• b) depositing on the layer of the at least one dielectric, a mask forming layer for providing a via-level mask layer;
• c) creating an elongated via pattern in the via-level mask layer;
• wherein said elongated via pattern is elongated in the orthogonal direction to a subsequently to be formed line level pattern;
• d) depositing a layer of line-level dielectric;
• e) creating a line pattern through the layer of line-level dielectric;
• f) transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern to generate an aligned dual damascene structure, which is self aligned in said orthogonal direction;
• g) depositing a conductive liner layer and then filling the dual damascene structure with a conductive fill metal to form a set of metal lines;
• and
• h) planarizing the metal and liner layers so that the metal is coplanar with the top of layer of at least one dielectric on the substrate surface.