Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition
AssigneeAdvanced Micro Devices, Inc.
InventorsMichael Friedemann, Volker Kahlert
Life of this patent
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Abstract
In forming a thin conductive layer in an interconnect structure by sputter deposition including a re-sputtering step, a flash deposition step is performed after the re-sputtering step to provide a sufficient layer thickness at critical locations, such as at positions of structure irregularities. The flash deposition step may be performed for a fixed process time so that less effort in process control is required while, at the same time, an increased reliability may be obtained compared to conventional approaches without a flash deposition.
Claims27
A method, comprising:
- sputter depositing a layer of conductive material within an opening formed in a dielectric layer;
- re-sputtering a portion of said conductive material deposited within said opening;
- sputter depositing additional portions of said conductive material within said opening;
- and
- performing at least one additional re-sputtering process after the process of sputter depositing said additional portions of said conductive material within said opening.
A method of controlling a degree of coverage of an interconnect structure, the method comprising:
- providing a substrate having formed therein at least one interconnect structure including vias and trenches;
- forming a layer of conductive material above said interconnect structure by a re-sputter deposition technique;
- sputter depositing said conductive material in a final flash based on at least one specified process parameter;
- determining a thickness of said conductive material at a critical position in said interconnect structure;
- determining a desired value of said at least one specified process parameter on the basis of said determined thickness;
- and
- forming a layer of said conductive material on one or more substrates while using said desired value in said final flash of sputter deposition.
A method, comprising:
- sputter depositing a layer of conductive material within an opening formed in a dielectric layer;
- re-sputtering with a first bias power a portion of said conductive material deposited within said opening;
- sputter depositing additional portions of said conductive material within said opening with a second bias power for a fixed deposition time, said second bias power being less than said first bias power;
- and
- performing at least one additional re-sputtenng process after the process of sputter depositing said additional portions of said conductive material within said opening.
A method of sputter depositing a conductive material over an interconnect structure, the method comprising:
- sputter depositing a first layer of said conductive material;
- performing a sequence including re-sputtering a portion of said conductive material and depositing a second layer of said conductive material, said sequence being a non-final sequence of sputter depositing said conductive material;
- and
- performing a second sequence including re-sputtering a portion of said second layer of said conductive material and depositing a further layer of said conductive material.
Dependencies are inferred from the claim text.