Barrier metal re-distribution process for resistivity reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Lin Huang, Ching-Hua Hsieh, Shau-Lin Shue
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Abstract
A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.
Claims16
A process for re-distributing a barrier layer, comprising the steps of:
- providing a substrate having a contact opening structure and a metal barrier layer deposited in said contact opening structure;
- and
- re-sputtering said barrier layer by bombarding said barrier layer with pure argon without metal ion bombardment;
- and
- re-sputtering the resultant barrier layer by providing a metal target and bombarding said barrier layer with argon and metal ions from said metal target.
A process for re-distributing a barrier layer, comprising the steps of
- providing a substrate having a contact opening structure and a metal barrier layer deposited in said contact opening structure;
- providing a process chamber comprising a source DC supply;
- placing said substrate in said process chamber;
- re-sputtering said barrier layer by providing a metal target and bombarding said barrier layer with argon ions and metal ions from said metal target with said source DC supply on;
- and
- re-sputtering said barrier layer by bombarding the resultant barrier layer with argon ions without metal ion bombardment with said source DC supply off.
Dependencies are inferred from the claim text.