Dual layer barrier film techniques to prevent resist poisoning
AssigneeLSI Logic Corporation
InventorsHong-Qiang Lu, Wei-Jen Hsia, Wilbur G. Catabay
Life of this patent
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Abstract
Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.
Claims18
A process for forming a dual layer barrier film to prevent diffusion of nitrogen into a photoresist layer used in patterning a semiconductor device, comprising:
- depositing a first barrier layer containing silicon carbide and nitrogen directly on an interconnect conductor, such that the first barrier layer adjacently contacts the interconnect conductor;
- depositing a nitrogen-free second barrier layer comprising silicon carbide directly on the first barrier layer, such that the second barrier layer adjacently contacts the first barrier layer;
- forming a first low-k dielectric layer over the second barrier layer;
- and
- depositing a photoresist material to form a photoresist layer above at least a portion of the first dielectric layer.
A process for forming a barrier film to prevent poisoning a photoresist material used in forming a semiconductor device, comprising:
- depositing a first barrier layer containing silicon carbide and nitrogen on a surface located to control electrical leakage from a conductor, such that the first barrier layer adjacently contacts the surface;
- depositing a nitrogen-free second barrier layer comprising silicon carbide directly on top of the first barrier layer, such that the second barrier layer adjacently contacts the first barrier layer;
- forming first and second low-k dielectric layers over the second barrier layer;
- and
- depositing a photoresist material to form a photoresist layer above at least a portion of the first low-k dielectric layer.
Dependencies are inferred from the claim text.