US 7,071,087 B2 · Technique to grow high quality ZnSe epitaxy layer on Si substrate

Abstract

A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1−x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1−x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.

Claims26

Dependent claims

A process to grow ZnSe film on Si substrate, comprising:

(1) providing a clean flat Si substrate;
(2) growing a first SiGe epitaxital layer with a given thickness to contain a large amount of threading dislocation created by lattice dislocation at the bottom of the layer and interfaces;
(3) performing high temperature annealing to the first SiGe epitaxital layer in situ to reduce threading dislocation density;
(4) growing a second and optionally a third SiGe epitaxital layer to terminate the threading dislocation propagating upward from the first epitaxital layer with the produced strained interfaces, and performing high temperature annealing in situ during both growing periods;
(5) growing a pure Ge layer on the surface of the top epitaxital layer obtained in step (4);
and
(6) eventually growing a ZnSe layer on the pure Ge layer.

4 more elements

Dependencies are inferred from the claim text.

Technique to grow high quality ZnSe epitaxy layer on Si substrate

Life of this patent

Technique to grow high quality ZnSe epitaxy layer on Si substrate

Life of this patent

Abstract

Claims26