Method of fabricating polysilicon film by excimer laser crystallization process
AssigneeAu Optronics Corporation
InventorKun-chih Lin
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Abstract
A method of fabricating a polysilicon film by an excimer laser crystallization process. First, a substrate comprising a first region and a second region is provided. An amorphous silicon layer and a mask layer are formed on the substrate in sequence. Then, a photo-etching process is performed to remove the mask layer in the first region. A heat-retaining capping layer is formed on the mask layer and the amorphous silicon layer. After that, an excimer laser crystallization process is performed so that the amorphous silicon layer in the first region is crystallized into a polysilicon film.
Claims24
A method of fabricating a polysilicon film by an excimer laser crystallization process, the method comprising following steps:
- providing a substrate defined with a first region and a second region;
- forming an amorphous silicon film on the substrate;
- forming a mask layer on the amorphous silicon film;
- performing a first photo-etching process to remove the mask layer in the first region;
- forming a heat-retaining capping layer covering the mask layer in the second region and the amorphous silicon film in the fist region;
- and
- performing the excimer laser crystallization process to make the amorphous silicon film, covered by the heat-retaining capping layer, in the first region crystallize to a polysilicon film, using an excimer laser to irradiate the amorphous film to make the amorphous silicon film in the second region, which is covered with the mask layer, become partially melted and make the amorphous film in the first region, which is not covered with the mask layer, become completely melted, and grains are grown laterally toward the first region from the interface between the first region and the second region.
A method of fabricating a polysilicon film by an excimer laser crystallization process, the method comprising following steps:
- providing a substrate defined with a first region and a second region;
- forming an amorphous silicon film on the substrate;
- forming a heat-retaining capping layer covering the amorphous silicon film in both of the first region and the second region;
- forming a mask layer on the heat-retaining capping layer;
- performing a first photo-etching process to remove the mask layer in the first region and expose the heat-retaining capping layer in the first region;
- and
- performing the excimer laser crystallization process to make the amorphous silicon film, covered by the heat-retaining capping layer, in the first region crystallize to a polysilicon film, using an excimer laser to irradiate the amorphous film to make the amorphous silicon film in the second region, which is covered with the mask layer, become partially melted and make the amorphous film in the first region, which is not covered with the mask layer, become completely melted, and grains are grown laterally toward the first region from the interface between the first region and the second region.
Dependencies are inferred from the claim text.