Method for preparing a bonding surface of a semiconductor layer of a wafer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsChristophe Maleville, Corinne Maunand Tussot
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Abstract
A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.
Claims18
A method for preparing a bonding surface of a semiconductor layer of a wafer comprising:
- treating the bonding surface to oxidize contaminants;
- cleaning the bonding surface to remove essentially all remaining contaminants;
- and then
- oxidizing the bonding surface with ozone to improve the hydrophilic properties of the bonding surface.
In a method for preparing a bonding surface of a semiconductor layer of a wafer for bonding to a second wafer wherein the bonding surface is cleaned to remove contaminants, the improvement which comprises oxidizing the bonding surface with ozone after the surface is cleaned to improve the hydrophilic properties of the bonding surface.
Dependencies are inferred from the claim text.