Shallow amorphizing implant for gettering of deep secondary end of range defects

A method for forming an amorphous shallow implant region that getters defects from a pocket implantation;

• comprising:
• a) providing a gate structure, on a substrate comprised with a first conductivity type dopant said substrate comprised of an upper crystalline section;
• b) performing a pocket amorphizing implantation procedure to implant ions of a first conductivity type to form a pocket implant region adjacent to said gate structure and an amorphous pocket region;
• (1) said amorphous pocket region is formed at a first depth below the substrate surface;
• c) performing a shallow amorphizing implant to form an amorphous shallow implant region;
• the shallow amorphizing implant comprises:
• implanting ions of Si, As, or Ge species;
• (1) said amorphous shallow implant region being formed at a second depth above said amorphous pocket region;
• d) performing a SDF, implant to form SDE regions of a second conductivity type using said gate structure as a mask;
• e) performing a source/drain implant procedure to form deep source/drain regions;
• f) performing an anneal procedure to recrystalize the amorphous shallow implant region and said amorphous pocket region, whereby said amorphous shallow implant region reduces defects formed by the pocket amorphizing implant.

A method of for a pocket implant comprising:

• a) providing a gate structure on a semiconductor substrate comprised with a first conductivity type dopant;
• b) performing a pocket amorphizing implantation procedure to implant ions of a first conductivity type to form a pocket implant region adjacent to said gate structure, an amorphous pocket region and pocket interstitials under the amorphous pocket region;
• c) performing a shallow amorphizing implant to form an amorphous shallow implant region and shallow implant interstitials;
• the amorphous shallow implant region being formed at a second depth above said amorphous pocket region;
• the substrate above the amorphous shallow implant region remains crystalline;
• (1) said amorphous shallow implant region is formed at a minimum depth of about 8 nm and a maximum depth of 20 nm below the substrate surface;
• said amorphous shallow implant region has a thickness between 5 and 10 nm;
• d) performing a SDE implant to form SDE regions of a second conductivity type, in an area of said semiconductor substrate not covered by said gate structure, with said SDE regions located in a top portion of said pocket region;
• e) forming spacers on the sidewalls of the gate structure;
• f) performing a S/D implant procedure to form Deep S/D regions;
• g) performing an anneal procedure comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and said amorphous pocket region;
• whereby said shallow amorphous implant region reduces the defects from the pocket implantation.