Methods of forming capacitors, and methods of forming DRAM circuitry

A method of forming a capacitor structure comprising:

• providing a substrate having a substrate node location
• forming a contact structure in electrical communication with the substrate node location, the contact structure being disposed between two conductive lines, extending elevationally above and laterally outward over and contacting an uppermost surface of each of the two conductive lines;
• forming a first container having a continuous conductive layer defining a first interior area, the conductive layer being joined with the contact structure, the first container being disposed at least partially over one of the two conductive lines;
• forming a second container having a continuous conductive layer defining a second interior area, the conductive layer being joined with the contact structure, the first and second interior areas being spaced apart from one another in a non-overlapping relationship;
• and
• forming a dielectric layer and a conductive capacitor electrode layer disposed operably proximate the first container the second container and portions of the contact structure.

A method of forming DRAM circuitry comprising:

• providing a substrate having first and second spaced apart node locations;
• forming a first storage capacitor in electrical communication with the first node location and comprising cylinder structures consisting of first and second cylinders, the first cylinder being at least partially disposed over a first conductive line, the second cylinder being disposed at least partially over a second conductive line;
• forming a second storage capacitor in electrical communication with the second node location and comprising capacitor cylinders consisting of third and fourth cylinders, the third cylinder being disposed at least partially over a third conductive line, the fourth cylinder being at least partially disposed over a fourth conductive line;
• lining the first, second third and fourth cylinders with a dielectric layer;
• and
• depositing a conductive capacitor electrode layer over the dielectric layer and within the cylinders.