Methods of fabricating MIM capacitors of semiconductor devices

A method of fabricating a MIM capacitor of a semiconductor device comprising:

• forming a lower interconnect on a semiconductor substrate;
• sequentially depositing second and third insulating layers over the lower interconnect;
• performing a first damascene process to form first and second via holes and a first trench within the second and the third insulating layers;
• filling the first and second via holes and the first trench with a conductive material to form a first contact plug connected to the lower interconnect and a second contact plug to be in contact with a lower electrode of a MIM capacitor;
• forming the MIM capacitor over the second contact plug;
• sequentially depositing fourth and fifth insulating layers;
• performing a second damascene process to form a third via hole and a second trench within the fourth and the fifth insulating layers;
• and
• filling the third via hole and the second trench to form a third contact plug in contact with the upper electrode of the capacitor and a fourth contact plug connected to the lower interconnect;
• wherein performing the first damascene process comprises:
• forming the first and second via holes within the third insulating layer;
• filling a photoresist material into the first and second via holes;
• hardening the photoresist;
• forming a mask pattern exposing the first via hole;
• forming a trench using the mask pattern as an etch mask;
• removing the etch mask;
• and
• removing the photoresist and the second insulating layer in the via holes.