Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD

A method of manufacturing a semiconductor device having a dielectric capacitor including a bottom electrode, a dielectric layer and a top electrode on an underlying substrate having a three-dimensional structure, comprising:

• providing a silicon substrate having a first insulation layer comprising SiO2 thereon, and
• a second insulation layer comprising SiO2 formed on said first insulation layer, said second insulation layer having a hole formed therein;
• forming a bottom electrode on side wall of said hole and a surface of said first insulation layer in a bottom of the hole;
• forming a third insulation layer on the top surface of said second insulation layer;
• forming a dielectric layer covering said bottom electrode and said third insulation layer, wherein the said third insulation layer is a MgO layer or a Al2O3 layer;
• forming a top electrode on said dielectric layer;
• wherein the bottom electrode and the top electrode are formed by a metalorganic chemical vapor deposition process at 300° C. or higher and 500° C. or lower using a β-diketone ruthenium complex as the precursor,
• one of O2, H2, N2O, O3, CO and CO2 is used as a reaction gas, and the volume ratio of the reaction gas to a carrier gas is 1% or more.