Methods of forming a field effect transistor having source/drain material over insulative material

A method of forming a field effect transistor comprising:

• providing masking material over semiconductive material of a semiconductor substrate, the masking material masking at least a portion of a transistor channel area;
• while the masking material masks at least a portion of the transistor channel area, forming a lightly doped drain region within a source/drain area of semiconductive material of the semiconductor substrate;
• after forming the lightly doped drain region, etching an opening into the source/drain area of the semiconductor substrate, the opening having a base comprising semiconductive material;
• after the etching, forming insulative material within the opening over the semiconductive material base, the insulative material less than completely filling the opening and having a substantially uniform thickness across the opening;
• forming semiconductive source/drain material within the opening over the insulative material within the opening;
• and
• after forming the lightly doped drain region, providing a transistor gate operatively proximate the semiconductive source/drain material.