Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Hideto Ohnuma
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Abstract
There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.
Claims42
A method of manufacturing a semiconductor device comprising the step of:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film;
- forming an insulating film over the semiconductor film;
- and
- ion-doping an impurity element into a channel region of the semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of carbon is at 3×1017 atoms/cm3 or less in said semiconductor film after the step,
- wherein no mass separation is performed in the ion-doping step, and
- wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%.
A method of manufacturing a semiconductor device comprising the step of:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film;
- forming an insulating film over the semiconductor film;
- ion-doping an impurity element into a channel region of the semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of nitrogen is at 1×1017 atoms/cm3 or less in said semiconductor film after the step,
- wherein no mass separation is performed in the ion-doping step, and
- wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%.
A method of manufacturing a semiconductor device comprising the step of:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film;
- forming an insulating film over the semiconductor film;
- and
- ion-doping an impurity element into a channel region of the semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of oxygen is at 3×1017 atoms/cm3 or less in said semiconductor film after the step,
- wherein no mass separation is performed in the ion-doping step, and
- wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%.
A method of manufacturing a semiconductor device comprising the step of:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film;
- forming an insulating film over the semiconductor film;
- ion-doping an impurity element into a channel region of the semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of hydrogen is at 1×1019 atoms/cm3 or less in said semiconductor film after the step,
- wherein no mass separation is performed in the ion-doping step, and
- wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%.
A method of manufacturing a semiconductor device comprising the step of:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film;
- forming an insulating film over the semiconductor film;
- ion-doping an impurity element into a channel region of the semiconductor film
- through the insulating film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein said impurity element is doped into said semiconductor film by using a source material gas containing said impurity element diluted with hydrogen to the concentration in the range from 0.5% to 5%, and
- wherein no mass separation is performed in the ion-doping step.
Dependencies are inferred from the claim text.